A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology
نویسندگان
چکیده
منابع مشابه
A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology.
We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4 V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at most 5 kHz, which is 30 Hz/μm2, at an excess bias of...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2012
ISSN: 1094-4087
DOI: 10.1364/oe.20.005849